Results from STEEPER published in IEEE EDL

STEEPER participants from Research Center Jülich and IUNET (Italian University NanoElectronics Team) have published their findings on “Inverters with strained Si nanowire complementary tunnel field-effect transistors” in IEEE Electron Device Letters.

L. Knoll, Q. T. Zhao, Member, IEEE, A. Nichau, S.Trellenkamp, S. Richter, A. Scha╠łfer, D. Esseni, L. Selmi, K. K. Bourdelle, S. Mantl, Member, IEEE. Inverters with strained Si nanowire complementary tunnel field-effect transistors. EEE Electron Device Letters Volume 34, Issue 6, 2013 doi: 10.1109/LED.2013.2258652