STEEPER results in APL

Another paper by STEEPER participants from Research Center Jülich, in collaboration with the University of Leeds, the University of Warwick and CEA-LETI has been published in Applied Physics Letters.

S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Hollàˆnder et al., IBand engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Appl. Phys. Lett. 102, 192103 (2013); doi: 10.1063/1.4805034