Tunnel FETs are now foreseen as coming sooner than III-V channels

Paolo Gargini, Intel Fellow and chairman of the International Technology Roadmap for Semiconductors (ITRS) used a talk at the Industry Strategy Symposium Europe held by the SEMI industry organization in Grenoble, to discuss the prospect of a field effect transistor combined with quantum tunneling as a means of reducing power consumption while maintaining adequate performance.
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Device physics strikes back

Devices physics strikes back: Tunnel FETs to battle dark silicon.

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